Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes
Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes
Source: https://www.bath.ac.uk/
Authors: D. Oriato , Alison B. Walker , W. N. Wang
Abstract
Charge transport has been simulated in a novel InGaN/GaN quantum light-emitting diode.
Asymmetric tunneling of holes and electrons was used to enhance the diode’s quantum efficiency.
A self-consistent solution of the Poisson and Schr6dinger equations was used to obtain the band profile, energy levels, and wave functions.
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